دیتاشیت CSD17578Q3AT

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CSD17578Q3AT	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD17578Q3AT
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 3.2W;37W
Total Gate Charge (Qg@Vgs): 22.2nC@10V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 1590pF@15V
Continuous Drain Current (Id): 20A
Gate Threshold Voltage (Vgs(th)@Id): 1.9V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 7.3mΩ@10A,10V
Package: VSONP-8
Manufacturer: Texas Instruments
Power Dissipation (Max): 3.2W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Vgs (Max): ±20V
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Feature: -
Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 15V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Part Status: Active
Series: NexFET™
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Supplier Device Package: 8-VSONP (3x3.15)
Mounting Type: Surface Mount
Base Part Number: CSD175
detail: N-Channel 30V 20A (Ta) 3.2W (Ta), 37W (Tc) Surface Mount 8-VSONP (3x3.15)